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The Atomic and Electronic Structure of the {211} =3 Twin Boundary in Cubic Silicon-Carbide
The Atomic and Electronic Structure of the {211} =3 Twin Boundary in Cubic Silicon-Carbide
The Atomic and Electronic Structure of the {211} =3 Twin Boundary in Cubic Silicon-Carbide
Kohyama, M. (Autor:in) / Yamamoto, R. (Autor:in) / Doyama, M.
2nd International conference on computer applications to materials and molecular science and engineering, Computer aided innovation of new materials ; 1992 ; Yokohama; Japan
01.01.1993
4 pages
In 2 pts. Also known as CAMSE 92
Aufsatz (Konferenz)
Englisch
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