Tight Binding Calculation of Tilt and Twist Boundaries in Silicon: Fid-Bau Portal

2nd International conference on computer applications to materials and molecular science and engineering, Computer aided innovation of new materials ; 1992 ; Yokohama; Japan

Erschienen in:

Computer aided innovation of new materials ; 651-654

COMPUTER AIDED INNOVATION OF NEW MATERIALS

Erscheinungsdatum:

01.01.1993

Format / Umfang:

4 pages

Anmerkungen:

In 2 pts. Also known as CAMSE 92

ISBN:

044489778X

Medientyp:

Aufsatz (Konferenz)

Format:

Sprache:

Englisch

Schlagwörter:

computer applications , materials science , computer aided innovation , new materials , CAMSE , materials engineering , molecular science

Kohyama, M. / Kose, S. / Yamamoto, R. | British Library Online Contents | 1993

Cathodoluminescence study on the tilt and twist boundaries in bonded silicon wafers

Sekiguchi, T. / Ito, S. / Kanai, A. | British Library Online Contents | 2002

Twist, tilt, and symmetric grain boundaries in hexagonal materials

Glowinski, K. / Morawiec, A. | British Library Online Contents | 2014

Atomistic modelling of zirconium and silicon segregation at twist and tilt grain boundaries in molybdenum

Lenchuk, O. / Rohrer, J. / Albe, K. | British Library Online Contents | 2016

Energy Calculation of the = 9 <011> Tilt Grain Boundary in Silicon Using Keating Potential and Tight-Binding Model

Cheikh, M. / Hairie, A. / Hairie, F. et al. | British Library Online Contents | 1993

Nach oben