Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Transition Pathway Analysis of Homogeneous Dislocation Nucleation in a Perfect Silicon Crystal
Transition Pathway Analysis of Homogeneous Dislocation Nucleation in a Perfect Silicon Crystal
Transition Pathway Analysis of Homogeneous Dislocation Nucleation in a Perfect Silicon Crystal
Saeed, H.A. (Autor:in) / Izumi, S. (Autor:in) / Hara, S. (Autor:in) / Sakai, S. (Autor:in) / Lou, J. / Derlet, P.M. / Materials Research Society
Symposium, Mechanical Behavior at Small Scales; experiments and modeling ; 2009
01.01.2010
6 pages
Includes bibliographical references and index
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
| British Library Online Contents | 2001
Influence of single crystal orientation on homogeneous dislocation nucleation under uniaxial loading
| British Library Online Contents | 2008
Universal scaling laws for homogeneous dislocation nucleation during nano-indentation
| British Library Online Contents | 2016
Universal scaling laws for homogeneous dislocation nucleation during nano-indentation
| British Library Online Contents | 2016
Predictive modeling of nanoindentation-induced homogeneous dislocation nucleation in copper
| British Library Online Contents | 2004