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Spectroscopic investigation of deep levels related to the compensation mechanism of nominally undoped semi-insulating InP

Hirt, G. / Mono, T. / Mueller, G.

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Spectroscopic investigation of deep levels related to the compensation mechanism of nominally undoped semi-insulating InP

Hirt, G. / Mono, T. / Mueller, G.

Spectroscopic investigation of deep levels related to the compensation mechanism of nominally undoped semi-insulating InP

Hirt, G. / Mono, T. / Mueller, G.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Dokumentinformationen

Titel:

Spectroscopic investigation of deep levels related to the compensation mechanism of nominally undoped semi-insulating InP

Beteiligte:

Hirt, G. (Autor:in) / Mono, T. (Autor:in) / Mueller, G. (Autor:in) / Fornari, R.

Erschienen in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 101

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Erscheinungsdatum:

01.01.1994

Format / Umfang:

101 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 620.11

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Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation

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