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The influence of exciton migration on photoluminescence lifetime in growth-interrupted GaAs/AlAs single quantum wells
The influence of exciton migration on photoluminescence lifetime in growth-interrupted GaAs/AlAs single quantum wells
The influence of exciton migration on photoluminescence lifetime in growth-interrupted GaAs/AlAs single quantum wells
Yu, H. (Autor:in) / Murray, R. (Autor:in) / Henini, M. / Szweda, R.
01.01.1995
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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