Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electronic States Associated with Straight Dislocations in P-Type Silicon Studied by Means of Electric-Dipole Spin Resonance
Electronic States Associated with Straight Dislocations in P-Type Silicon Studied by Means of Electric-Dipole Spin Resonance
Electronic States Associated with Straight Dislocations in P-Type Silicon Studied by Means of Electric-Dipole Spin Resonance
Kveder, V. (Autor:in) / Sekiguchi, T. (Autor:in) / Sumino, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 1189-1194
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electric-dipole spin resonance of Be-doped silicon
British Library Online Contents | 1997
|Interaction of Nitrogen with Dislocations Studied by Means of Amplitude-Dependent Internal Friction
British Library Online Contents | 1999
|Electric-dipole Spin Resonance of Defects Correlated With the Diffusion of Zn Into Si
British Library Online Contents | 1995
|Energy States of Deformation-Induced Dislocations in Silicon Crystals
British Library Online Contents | 1995
|