Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
Emtsev, V. V. (Autor:in) / Poloskin, D. S. (Autor:in) / Shek, E. I. (Autor:in) / Sobolev, N. A. (Autor:in)
MATERIALS SCIENCE FORUM ; 163-166
01.01.1995
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers
British Library Online Contents | 1994
|Impurity-defect Complexes In Neutron Transmutation Doped Gallium Arsenide And Germanium Crystals
British Library Online Contents | 1995
|Carbon and Silicon Impurity Centers in GaAs
British Library Online Contents | 1993
|Neutron Transmutation Doping of Isotopically Controlled Ge
British Library Online Contents | 1993
|Neutron transmutation doping of III-VI layered semiconductors
British Library Online Contents | 1997
|