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Generation of EL2-Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
Generation of EL2-Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
Generation of EL2-Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
Lin, T.-C. (Autor:in) / Indou, S. (Autor:in) / Okumura, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 255-260
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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