A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature: Fid-Bau Portal

A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

Chen, B.-Y. / Chen, J.-R. / Jenq, F.-L. / Hong, C.-S.

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A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

Chen, B.-Y. / Chen, J.-R. / Jenq, F.-L. / Hong, C.-S.

A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

Chen, B.-Y. / Chen, J.-R. / Jenq, F.-L. / Hong, C.-S.

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Zugriff über TIB

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Titel:

A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

Beteiligte:

Chen, B.-Y. (Autor:in) / Chen, J.-R. (Autor:in) / Jenq, F.-L. (Autor:in) / Hong, C.-S. (Autor:in) / Feldman, L. C. / Nishizawa, J. / Van der Weg, W. F.

Erschienen in:

A journal devoted to applied physics and chemistry of surfaces and interfaces ; 601-606

APPLIED SURFACE SCIENCE ; 100/101

Erscheinungsdatum:

01.01.1996

Format / Umfang:

6 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

Chen, B.-Y. / Chen, J.-R. / Jenq, F.-L. et al. | British Library Online Contents | 1996

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