Interface structure of a chlorine-doped Si~3N~4 studied by high-resolution transmission electron microscopy: Fid-Bau Portal

Interface structure of a chlorine-doped Si~3N~4 studied by high-resolution transmission electron microscopy

Kleebe, H.-J. / Pezzotti, G. / Nishida, T.

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Interface structure of a chlorine-doped Si~3N~4 studied by high-resolution transmission electron microscopy

Kleebe, H.-J. / Pezzotti, G. / Nishida, T.

Interface structure of a chlorine-doped Si~3N~4 studied by high-resolution transmission electron microscopy

Kleebe, H.-J. / Pezzotti, G. / Nishida, T.

Zugriff

Zugriff über TIB

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Titel:

Interface structure of a chlorine-doped Si~3N~4 studied by high-resolution transmission electron microscopy

Beteiligte:

Kleebe, H.-J. (Autor:in) / Pezzotti, G. (Autor:in) / Nishida, T. (Autor:in)

Erschienen in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 16 ; 453-456

Erscheinungsdatum:

01.01.1997

Format / Umfang:

4 pages

ISSN:

0261-8028

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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