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Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons
Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons
Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons
Kuriplach, J. (Autor:in) / Van Hoecke, T. (Autor:in) / Van Waeyenberge, B. (Autor:in) / Dauwe, C. (Autor:in) / Segers, D. (Autor:in) / Balcaen, N. (Autor:in) / Morales, A. L. (Autor:in) / Trauwaert, M.-A. (Autor:in) / Vanhellemont, J. (Autor:in) / Sob, M. (Autor:in)
01.01.1997
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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