Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
HVPE GaN and AlGaN "Substrates" for Homoepitaxy
HVPE GaN and AlGaN "Substrates" for Homoepitaxy
HVPE GaN and AlGaN "Substrates" for Homoepitaxy
Melnik, Y. (Autor:in) / Nikolaev, A. (Autor:in) / Stepanov, S. (Autor:in) / Kikitina, I. (Autor:in) / Vassilevski, K. (Autor:in) / Ankudinov, A. (Autor:in) / Musikhin, Y. (Autor:in) / Dmitriev, V. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1121-1124
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The Growth of GaN Films on Si Substrates by HVPE
British Library Online Contents | 2005
|Effect of sulfur passivation of InSb (001) substrates on molecular-beam homoepitaxy
British Library Online Contents | 2015
|Effect of sulfur passivation of InSb (001) substrates on molecular-beam homoepitaxy
British Library Online Contents | 2015
|Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
British Library Online Contents | 2009
|Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE
British Library Online Contents | 1999
|