Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Inverted charge states of anion and cation-site vacancies in zinc blende semiconductors: theory
Inverted charge states of anion and cation-site vacancies in zinc blende semiconductors: theory
Inverted charge states of anion and cation-site vacancies in zinc blende semiconductors: theory
Chadi, D. J. (Autor:in) / Davies, G. / Nazare, M. H.
01.01.1997
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Amphoteric nature of vacancies in zinc blende semiconductors
British Library Online Contents | 2003
|Basic principles governing the surface atomic structure of zinc blende semiconductors
British Library Online Contents | 1993
|Ab initio investigations on the dislocation core properties in zinc-blende semiconductors
British Library Online Contents | 2004
|British Library Online Contents | 2012
|High pressure dependence of positron states in zinc-blende boron nitride
British Library Online Contents | 2002
|