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Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum
Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum
Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum
Jonnalagadda, R. (Autor:in) / Yang, D. (Autor:in) / Rogers, B. R. (Autor:in) / Hillman, J. T. (Autor:in) / Foster, R. F. (Autor:in) / Cale, T. S. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 1982-1989
01.01.1999
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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