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TEM study of 1010 inversion domains in GaN layers grown on (0001) sapphire substrate
TEM study of 1010 inversion domains in GaN layers grown on (0001) sapphire substrate
TEM study of 1010 inversion domains in GaN layers grown on (0001) sapphire substrate
Potin, V. (Autor:in) / Ruterana, P. (Autor:in) / Nouet, G. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 173 - 176
01.01.1999
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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