Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: a possible effect of pit filling and difference in thermal expansion coefficients
Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: a possible effect of pit filling and difference in thermal expansion coefficients
Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: a possible effect of pit filling and difference in thermal expansion coefficients
Constantino, M.E. (Autor:in) / Navarro-Contreras, H. (Autor:in) / Vidal, M.A. (Autor:in) / Salazar-Hernandez, B. (Autor:in) / Lastras-Martnez, A. (Autor:in) / Hernandez-Calderon, I. (Autor:in) / Lopez-Lopez, M. (Autor:in)
APPLIED SURFACE SCIENCE ; 151 ; 271-279
01.01.1999
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1998
|British Library Online Contents | 2017
|British Library Online Contents | 2019
|British Library Online Contents | 2017
|Photomodulation Raman scattering spectroscopy of ZnSe/GaAs heterostructure interface
British Library Online Contents | 1996
|