Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

Koumetz, S. / Marcon, J. / Gautier, S. et al. | British Library Online Contents | 1999

Beryllium diffusion in short-period Al~xGa~1~-~xAs/AlAs-superlattices and vertically compact laser structures grown by molecular beam epitaxy

Gaymann, A. / Maier, M. / Bronner, W. et al. | British Library Online Contents | 1997

Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures

Ferrari, C. / Franzosi, P. / Lazzarini, L. et al. | British Library Online Contents | 1994

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | British Library Online Contents | 2000

Thermal stability of 1.55 mm quantum well laser structures grown by gas-source molecular beam epitaxy

Gordon, B. E. / Thompson, D. A. / Robinson, B. J. et al. | British Library Online Contents | 2003