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Low Temperature Photoluminescence of ^1^3C Enriched SiC-Crystals Grown by the Modified Lely Method
Low Temperature Photoluminescence of ^1^3C Enriched SiC-Crystals Grown by the Modified Lely Method
Low Temperature Photoluminescence of ^1^3C Enriched SiC-Crystals Grown by the Modified Lely Method
Sadowski, H. (Autor:in) / Peppermuller, C. (Autor:in) / Schulze, N. (Autor:in) / Laube, M. (Autor:in) / Pensl, G. (Autor:in) / Helbig, R. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 623-626
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2001
|Defect Reduction in SiC Crystals Grown by the Modified Lely Method
British Library Online Contents | 2003
|Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
British Library Online Contents | 2002
|Microstructure of Cubic SiC Grown by the Modified Lely-Method
British Library Online Contents | 2004
|UB Braunschweig | 1968
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