Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
Moulin, C. (Autor:in) / Pons, M. (Autor:in) / Pisch, A. (Autor:in) / Grosse, P. (Autor:in) / Faure, C. (Autor:in) / Basset, A. (Autor:in) / Basset, G. (Autor:in) / Passero, A. (Autor:in) / Billon, T. (Autor:in) / Pelissier, B. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 7-10
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Study of SiC single-crystal sublimation growth conditions
British Library Online Contents | 1995
|AIN Crystal Growth by Sublimation Technique
British Library Online Contents | 2001
|Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
British Library Online Contents | 2003
|Crystal Interface Shape Simulation during SiC Sublimation Growth
British Library Online Contents | 2003
|Numerical Simulation of SiC Boule Growth by Sublimation
British Library Online Contents | 2000
|