Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Zeeman Effect of D~1 Bound Exciton in 4H-SiC
Zeeman Effect of D~1 Bound Exciton in 4H-SiC
Zeeman Effect of D~1 Bound Exciton in 4H-SiC
Chen, C. Q. (Autor:in) / Helbig, R. (Autor:in) / Winkler, R. (Autor:in) / Wysmolek, A. (Autor:in) / Potemski, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 361-364
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Zeeman Spectroscopy on the Nitrogen Acceptor-Bound Exciton in Epitaxial ZnSe
British Library Online Contents | 1995
|Bound Exciton Spectra in Semi-Insulating GaAs
British Library Online Contents | 1995
|Bound Exciton Recombination in Electron Irradiated 4H-SiC
British Library Online Contents | 1998
|The Bound Exciton Model for Isoelectronic Centers in Silicon
British Library Online Contents | 1994
|