Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mm IR electroluminescence: Fid-Bau Portal

Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mm IR electroluminescence

Chernyak, L. / Ghabboun, J. / Lyahovitskaya, V. / Cahen, D.

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Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mm IR electroluminescence

Chernyak, L. / Ghabboun, J. / Lyahovitskaya, V. / Cahen, D.

Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mm IR electroluminescence

Chernyak, L. / Ghabboun, J. / Lyahovitskaya, V. / Cahen, D.

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Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Titel:

Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mm IR electroluminescence

Beteiligte:

Chernyak, L. (Autor:in) / Ghabboun, J. (Autor:in) / Lyahovitskaya, V. (Autor:in) / Cahen, D. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 81 ; 113 - 115

Erscheinungsdatum:

01.01.2001

Format / Umfang:

3 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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