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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
Pozina, G. (Autor:in) / Bergman, J. P. (Autor:in) / Monemar, B. (Autor:in) / Yamaguchi, S. (Autor:in) / Amano, H. (Autor:in) / Akasaki, I. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 137 - 139
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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