Comparison of luminescence and physical morphologies of GaN epilayers

Trager-Cowan, C. / Middleton, P. G. / O'Donnell, K. P. et al. | British Library Online Contents | 1997

GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

Damilano, B. / Grandjean, N. / Massies, J. et al. | British Library Online Contents | 2000

The influence of substrate etched on the quality of GaN epilayers

Mei, J. / Xie, X. / Hao, Q. et al. | British Library Online Contents | 2011

Influence of strain and buffer layer type on In incorporation during GaInN MOVPE

Scholz, F. / Off, J. / Kniest, A. et al. | British Library Online Contents | 1999

Optically pumped GaInN/GaN-DFB lasers: overgrown lasers and vertical modes

Hofmann, R. / Wagner, V. / Neuner, M. et al. | British Library Online Contents | 1999