Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes
Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes
Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes
Huang, L. M. (Autor:in) / Wen, T. C. (Autor:in) / Gopalan, A. (Autor:in) / Ren, F. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 104 ; 88-95
01.01.2003
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
British Library Online Contents | 2010
|Electrically active defects in SiC Schottky barrier diodes
British Library Online Contents | 2011
|Properties of Metal-Polyaniline Schottky Barriers
British Library Online Contents | 1999
|Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes
British Library Online Contents | 2014
|High-quality NiGe/Ge diodes for Schottky barrier MOSFETs
British Library Online Contents | 2008
|