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All-Organic Permanent Memory Transistor Using an Amorphous, Spin-Cast Ferroelectric-like Gate Insulator
All-Organic Permanent Memory Transistor Using an Amorphous, Spin-Cast Ferroelectric-like Gate Insulator
All-Organic Permanent Memory Transistor Using an Amorphous, Spin-Cast Ferroelectric-like Gate Insulator
Schroeder, R. (Autor:in) / Majewski, L. A. (Autor:in) / Grell, M. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 16 ; 633-636
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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