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Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing
Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing
Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing
Rzaev, M. (Autor:in) / Schaffler, F. (Autor:in) / Vdovin, V. (Autor:in) / Yugova, T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 137-141
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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