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Ab Initio Study of Dopant Interstitials in 4H-SiC
Ab Initio Study of Dopant Interstitials in 4H-SiC
Ab Initio Study of Dopant Interstitials in 4H-SiC
Mattausch, A. (Autor:in) / Bockstedte, M. (Autor:in) / Pankratov, O. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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