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Direct evidence for shuffle dislocations in Si activated by indentations at 77K
Direct evidence for shuffle dislocations in Si activated by indentations at 77K
Direct evidence for shuffle dislocations in Si activated by indentations at 77K
Asaoka, K. (Autor:in) / Umeda, T. (Autor:in) / Arai, S. (Autor:in) / Saka, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING A ; 400-401 ; 93-96
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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