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Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE
Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE
Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE
Lalev, G. M. (Autor:in) / Jifeng, W. (Autor:in) / Lim, J. W. (Autor:in) / Seishi, A. (Autor:in) / Katashi, M. (Autor:in) / Minoru, I. (Autor:in)
MATERIALS LETTERS ; 60 ; 1198-1203
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
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British Library Online Contents | 2001
|Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te
British Library Online Contents | 2006
|The relationship between stress and photoluminescence of Cd0.96Zn0.04Te single crystal
British Library Online Contents | 2007
|The effect of dislocations in Cd0.96Zn0.04Te single crystal on IR transmittance
British Library Online Contents | 2006
|Twin suppression in HWE grown CdTe epilayers on Si(111) by novel two-step growth procedure
British Library Online Contents | 2004
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