Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Anodically oxidized porous silicon as a substrate for EIS sensors
Anodically oxidized porous silicon as a substrate for EIS sensors
Anodically oxidized porous silicon as a substrate for EIS sensors
Sakly, H. (Autor:in) / Mlika, R. (Autor:in) / Chaabane, H. (Autor:in) / Beji, L. (Autor:in) / Ouada, H. B. (Autor:in)
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Light emitting diodes based on anodically oxidized silicon/porous silicon heterojunction
British Library Online Contents | 2000
|Luminescent properties of an anodically oxidized P-doped silicon wafer
British Library Online Contents | 1996
|Luminescent properties of an anodically oxidized P-doped silicon wafer
British Library Online Contents | 1996
|Pore Ordering in Anodically Oxidized Aluminum Thin Films
British Library Conference Proceedings | 1997
|Effects of anodizing conditions on bond strength of anodically oxidized film to titanium substrate
British Library Online Contents | 2007
|