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The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
Wang, X. F. (Autor:in) / Zeng, Y. P. (Autor:in) / Wang, B. Q. (Autor:in) / Zhu, Z. P. (Autor:in) / Du, X. Q. (Autor:in) / Li, M. (Autor:in) / Chang, B. K. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 4104-4109
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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