Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer

Li, D. B. / Aoki, M. / Miyake, H. et al. | British Library Online Contents | 2007

Room-temperature growth of ultrasmooth AIN epitaxial thin films on sapphire with NiO buffer layer

Sasaki, A. / Liu, J. / Hara, W. et al. | British Library Online Contents | 2004

Influence of strain and buffer layer type on In incorporation during GaInN MOVPE

Scholz, F. / Off, J. / Kniest, A. et al. | British Library Online Contents | 1999

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

Chiu, T. W. / Tonooka, K. / Kikuchi, N. | British Library Online Contents | 2010

Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

Park, J. H. / Lee, B. T. | British Library Online Contents | 2010