Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Theoretical study of phase separation in wurtzite InGaN
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 341-344
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems
British Library Online Contents | 2008
|Theoretical optical gain in InGaN quantum wells
British Library Online Contents | 1999
|Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
British Library Online Contents | 2002
|Nanosecond pump-and-probe study of wurtzite GaN
British Library Online Contents | 1997
|First principles computational study of wurtzite CdTe nanowires
British Library Online Contents | 2010
|