Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Structure of "Star" Defect in 4H-SiC Substrates and Epilayers
Structure of "Star" Defect in 4H-SiC Substrates and Epilayers
Structure of "Star" Defect in 4H-SiC Substrates and Epilayers
Lee, J. W. (Autor:in) / Skowronski, M. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
GaN epilayers on misoriented substrates
British Library Online Contents | 1999
|Precipitates in GaN epilayers grown on sapphire substrates
British Library Online Contents | 1998
|Orientation of cracks in AlGaN epilayers with sapphire substrates
British Library Online Contents | 2003
|Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
British Library Online Contents | 2010
|Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
British Library Online Contents | 1998
|