Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of Interface Structure on Schottky Barrier Heights of alpha-Al~2O~3(0001)/Ni(111) interfaces: A First-Principles Study
Influence of Interface Structure on Schottky Barrier Heights of alpha-Al~2O~3(0001)/Ni(111) interfaces: A First-Principles Study
Influence of Interface Structure on Schottky Barrier Heights of alpha-Al~2O~3(0001)/Ni(111) interfaces: A First-Principles Study
Shi, S. (Autor:in) / Tanaka, S. (Autor:in) / Kohyama, M. (Autor:in)
MATERIALS TRANSACTIONS ; 47 ; 2696-2700
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces
British Library Online Contents | 2006
|Barrier heights of GaN Schottky contacts
British Library Online Contents | 1997
|Interface States and Barrier Heights on Metal/4H-SiC Interfaces
British Library Online Contents | 2009
|First principles study of a2-Ti3Al(0001) surface and g-TiAl(111)/a2-Ti3Al(0001) interfaces
British Library Online Contents | 2013
|Schottky Barrier Heights and the Continuum of Gap States
Springer Verlag | 1990
|