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High-Performance Field-Effect Transistor Based on Dibenzo[d,dprime]thieno[3,2-b;4,5-bprime]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential
High-Performance Field-Effect Transistor Based on Dibenzo[d,dprime]thieno[3,2-b;4,5-bprime]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential
High-Performance Field-Effect Transistor Based on Dibenzo[d,dprime]thieno[3,2-b;4,5-bprime]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 19 ; 3008-3011
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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