Solution Processed Top-Gate n-Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions: Fid-Bau Portal

Solution Processed Top-Gate n-Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions

Yan, H. / Zheng, Y. / Blache, R. / Newman, C. / Lu, S. / Woerle, J. / Facchetti, A.

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Solution Processed Top-Gate n-Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions

Yan, H. / Zheng, Y. / Blache, R. / Newman, C. / Lu, S. / Woerle, J. / Facchetti, A.

Solution Processed Top-Gate n-Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions

Yan, H. / Zheng, Y. / Blache, R. / Newman, C. / Lu, S. / Woerle, J. / Facchetti, A.

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Titel:

Solution Processed Top-Gate n-Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions

Beteiligte:

Yan, H. (Autor:in) / Zheng, Y. (Autor:in) / Blache, R. (Autor:in) / Newman, C. (Autor:in) / Lu, S. (Autor:in) / Woerle, J. (Autor:in) / Facchetti, A. (Autor:in)

Erschienen in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 20 ; 3393-3398

Erscheinungsdatum:

01.01.2008

Format / Umfang:

6 pages

ISSN:

0935-9648

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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