Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
Malhan, R.K. (Autor:in) / Rashid, S.J. (Autor:in) / Kataoka, M. (Autor:in) / Takeuchi, Y. (Autor:in) / Sugiyama, N. (Autor:in) / Udrea, F. (Autor:in) / Amaratunga, G.A.J. (Autor:in) / Reimann, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1067-1070
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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