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Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
Mitani, T. (Autor:in) / Hattori, R. (Autor:in) / Yoshikawa, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 481-484
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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