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Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
APPLIED SURFACE SCIENCE ; 256 ; 6881-6886
01.01.2010
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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