Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electric Field Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
Electric Field Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
Electric Field Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
Cario, L. (Autor:in) / Vaju, C. (Autor:in) / Corraze, B. (Autor:in) / Guiot, V. (Autor:in) / Janod, E. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 5193-5197
01.01.2010
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
British Library Online Contents | 2013
|Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo~4S~8
British Library Online Contents | 2014
|British Library Online Contents | 2012
|Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
British Library Online Contents | 2009
|DOAJ | 2023
|