Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques: Fid-Bau Portal

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Scajev, P. / Mekys, A. / Malinovskis, P. / Storasta, J. / Kato, M. / Jarasiunas, K.

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Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Scajev, P. / Mekys, A. / Malinovskis, P. / Storasta, J. / Kato, M. / Jarasiunas, K.

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Scajev, P. / Mekys, A. / Malinovskis, P. / Storasta, J. / Kato, M. / Jarasiunas, K.

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Titel:

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Beteiligte:

Scajev, P. (Autor:in) / Mekys, A. (Autor:in) / Malinovskis, P. (Autor:in) / Storasta, J. (Autor:in) / Kato, M. (Autor:in) / Jarasiunas, K. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Erschienen in:

Silicon Carbide and Related Materials 2010 ; 157-160

MATERIALS SCIENCE FORUM ; 679/680

Erscheinungsdatum:

01.01.2011

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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