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Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator
Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator
Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator
Zhang, H. B. (Autor:in) / Yu, H. L. (Autor:in) / Bao, D. H. (Autor:in) / Li, S. W. (Autor:in) / Wang, C. X. (Autor:in) / Yang, G. W. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 24 ; 132-136
01.01.2012
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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