Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations

Gil, B. / Briot, O. / Aulombard, R.-L. et al. | British Library Online Contents | 1998

Growth and optimization of InAs/GaSb and GaSb/InAs interfaces

Tahraoui, A. / Tomasini, P. / Lassabatere, L. et al. | British Library Online Contents | 2000

Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well

Suzuki, K. / Kanisawa, K. / Perraud, S. et al. | British Library Online Contents | 2008

Calculated PL lifetimes of Si nanowires: the effect of a dispersion in the crystallographic orientations

Zianni, X. / Nassiopoulou, A. G. | British Library Online Contents | 2003

Passivation of GaSb and InAs by pH-activated thioacetamide

Stine, R. / Aifer, E. H. / Whitman, L. J. et al. | British Library Online Contents | 2009