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High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
Uchida, H. (Autor:in) / Minami, A. (Autor:in) / Sakata, T. (Autor:in) / Nagasawa, H. (Autor:in) / Kobayashi, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 1109-1112
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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