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Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers
Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers
Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers
Kusuma, D. Y. (Autor:in) / Lee, P. S. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 24 ; 4163-4169
01.01.2012
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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