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Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
Wang, D.C. (Autor:in) / Zhang, Y.M. (Autor:in) / Guo, H. (Autor:in) / Wang, Y.H. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
01.01.2013
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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