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Nanoporous InGaN of high In composition prepared by KOH electrochemical etching
Nanoporous InGaN of high In composition prepared by KOH electrochemical etching
Nanoporous InGaN of high In composition prepared by KOH electrochemical etching
Radzali, R. (Autor:in) / Zainal, N. (Autor:in) / Yam, F. K. (Autor:in) / Hassan, Z. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 2051-2057
01.01.2013
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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