Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Improved efficiency of p-type quasi-mono silicon blanket emitter solar cell by ion implantation and backside rounding
Improved efficiency of p-type quasi-mono silicon blanket emitter solar cell by ion implantation and backside rounding
Improved efficiency of p-type quasi-mono silicon blanket emitter solar cell by ion implantation and backside rounding
Lee, C. M. (Autor:in) / Chang, S. P. (Autor:in) / Chang, S. J. (Autor:in) / Wu, C. I. (Autor:in)
MATERIALS SCIENCE -WROCLAW- ; 31 ; 516-524
01.01.2013
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ion implanted crystalline silicon solar cells with blanket and selective emitter
| British Library Online Contents | 2011
Studies of SERS efficiency of gold coated porous silicon formed on rough silicon backside
| British Library Online Contents | 2017
Efficiency of commercial Cz-Si solar cell with a shallow emitter
| British Library Online Contents | 2010
Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
| British Library Online Contents | 2009