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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
Alexandru, M. (Autor:in) / Banu, V. (Autor:in) / Florentin, M. (Autor:in) / Jorda, X. (Autor:in) / Vellvehi, M. (Autor:in) / Tournier, D. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
Silicon Carbide and Related Materials 2013 ; 1130-1136
MATERIALS SCIENCE FORUM ; 778/780
01.01.2014
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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